Abstract
Selective disordering of In0.53Ga0.47As-InP multiple quantum well structures by ion implantation is demonstrated for the first time. As grown, annealed, and Si implanted and annealed samples were studied by transmission electron microscopy, optical absorption, and photoluminescence. A shift of the photoluminescence and absorption edge to higher energy was observed in implanted and annealed samples with respect to annealed only samples. This shift is attributed to a combination of disordering and Burstein–Moss effect.
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