Abstract
Stacking faults are observed in zinc sulfide (wurtzite) single crystals on basal planes (0001) and on prismatic planes (112̄0) and (12̄10) to the growth surface. The degradation of these stacking faults in different environments is described. The loop contrast observed to form at stacking faults on prismatic planes when exposed to high electron beam intensities in the electron microscope is explained by a thermally activated mass-transport mechanism. Migration of vacancies or atoms occurs depending on whether the stacking fault is extrinsic or intrinsic, respectively. Subjecting crystals to high pressures (about 60 kbar) results in an increase in the number of basal plane stacking faults. This is equivalent to a gradual phase change occurring over several atomic planes. Thermal etch figures observed by transmission electron microscopy in crystals annealed at 700° and 900°C are identified as a crystallographic polarity effect.
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