Disordered [formula omitted] superlattices grown by ultrahigh vacuum chemical vapor deposition

Abstract

A series of Si Si 1−x Ge x disordered superlattices with various degrees of disorder were grown in an ultrahigh vacuum chemical vapor deposition system (UHV/CVD). High-resolution double-crystal X-ray diffraction (HRXRD), and conventional cross-sectional transmission electron microscopy were used to evaluate the crystalline quality of these superlattices. A dynamical X-ray simulation program was employed to analyze the experimental rocking curves. Excellent matches between experimental rocking curves and simulated ones were obtained for all superlattices with various degrees of disorder.