Abstract
ABSTRACT The decrease of crystal phonon peak intensities in Raman spectra of silicon carbide after heavy-ion irradiation is analysed in relation to band-gap shrinkage and Urbach edge slope increase arising from accumulation of lattice disorder. The discrepancy on amorphous fractions deduced from Raman spectroscopy and Rutherford backscattering-channelling spectroscopy is addressed by taking into account point-defect formation and amorphization by displacement damage. A new analysis of Raman data is provided on the basis of self-absorption of scattered light associated with damage build-up.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
