Abstract
Deposition of various materials onto graphene without causing any disorder is highly desirable for graphene applications. Especially, sputtering is a versatile technique to deposit various metals and insulators for spintronics, and indium tin oxide to make transparent devices. However, the sputtering process causes damage to graphene because of high energy sputtered atoms. By flipping the substrate and using a high Ar pressure, we demonstrate that the level of damage to graphene can be reduced or eliminated in dc, rf, and reactive sputtering processes.
Highlights
Graphene has attracted enormous scientific and engineering interest due to its superior electronic, optical, thermal, mechanical properties.[1,2,3,4,5,6,7,8,9] The important properties of graphene include a high intrinsic charge carrier mobility and a tunability of its properties by applying a gate bias voltage
In order to make top-gate graphene field effect transistors (G-FET), a high-k dielectric gate material needs to be deposited onto graphene without damage, because the mobility of graphene is outstanding when graphene is pristine.[10,11]
Only thermal evaporation is known to be a non-destructive method of deposition onto graphene, which greatly limits the choice of materials in graphene devices
Summary
Graphene has attracted enormous scientific and engineering interest due to its superior electronic, optical, thermal, mechanical properties.[1,2,3,4,5,6,7,8,9] The important properties of graphene include a high intrinsic charge carrier mobility and a tunability of its properties by applying a gate bias voltage. We propose a defect-free sputter deposition technique onto graphene by flipping the sample at high Ar pressure during the deposition in order to reduce the energy of incident sputtering atoms.
Sign-in/Register to view highlights & summary Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
