Abstract
A theoretical formula based on carrier scattering in systems with a certain degree of disorder has been derived, which describes well the buildup transients of persistent photoconductivity and carrier transport due to the conduction-band tail states in semiconductor alloys. Important parameters, including the distribution of tail states caused purely by alloy disorder, can be obtained by comparing our theory with experimental data. The formula derived here has general validity for describing the conductivity due to the tail states in other systems with either structure (amorphous), location (impurity), or alloy disorder. \textcopyright{} 1996 The American Physical Society.
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
