Abstract
Disorder-activated phonon behaviors of the cubic rocksalt-type semiconductor alloy Li(1−x)/2Ga(1−x)/2MxO (M = Mg, Zn) prepared by high-pressure and high-temperature method has been studied by Raman scattering analysis. The LO Raman phonon in Li(1−x)/2Ga(1−x)/2MxO was found to exhibit a distinct two-mode behavior. The compositional dependence of Raman frequency, peak-width, and intensity has been discussed. A model associated with a composite mode of the Brillouin zone center and edge phonons combined with phonon dispersion curves determined by first-principle calculations were employed to explain the asymmetric broadening of the LO phonon mode. The broadening and asymmetric Raman line-shape in Li(1−x)/2Ga(1−x)/2MxO can be interpreted as a composite mode of the softening Brillouin zone center mode and the Brillouin zone edge mode.
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