Abstract
In this work a deep investigation of the dislocation on 4H-SiC substrate has been shown. The dislocation intersecting the surface were enhanced by KOH etching at 500 deg. C. performed on whole 6 inches substrate. A comparison between basal plane dislocations and threading screw dislocations in the substrate with the defects in the epitaxial layer (mainly stacking faults and carrots) was performed. The comparison between shows a correlation between basal plane dislocations density and stacking faults density maps.
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