Abstract
Diffusion-induced dislocations in silicon have long been of interest in semiconducting devices. Several investigations concerning the dislocations induced by doping of Si were carried out during the early sixties. However, there are still a number of unresolved questions concerning this problem. Because the boron doped chemical etch-stop technique is widely used in the fabrication of microsensors, new interest has arisen in the role of dislocations induced by boron diffusion and the behavior of these dislocations on the mechanical properties of microsensors. The doping of Si in this technique is heavy (>5x1019cm-3) and, consequently, the density of induced dislocations in the wafer is large. The dislocations will probably then play a critical role on the mechanical properties of thin Si wafers used in the etch-stop technique.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: Proceedings, annual meeting, Electron Microscopy Society of America
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
