Abstract
Several types of dislocations were found in CdWO4 single crystals. In-grown dislocations slip on (100) plane parallel to [001]. Dislocation pits were revealed in mechanically polished samples on (100) and (010) planes. Based on the results of chemical etching, it was inferred that the lattice dislocations gliding along < 001 > and < 100 > can split into partial dislocations. In the samples annealed at T = 600ºC for 2 h dislocation density decreased noticeably. After annealing shape and sizes of helical etch pits on (100) and (001) planes transform to those typical of lattice dislocations.
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