Abstract
This paper describes the extended results on the influence of dislocations in liquid-encapsulated Czochralski (LEC) grown semi-insulating GaAs substrates on threshold voltage of GaAs MESFET's. MESFET's located less than about 50 µm from a dislocation exhibit threshold voltage lower than those far from a dislocation and threshold voltage scatters at less than about 30 µm from a dislocation. The scattering is considered briefly from anisotropy of stress field around dislocations. Particular interest is devoted to the electrical properties around dislocations because of their detrimental influence on the FET threshold voltage.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
