Abstract
High voltage electron microscopy of silicon and GaAs layers grown by liquid phase epitaxy shows that two types of growth step sources are present. These consist of single dislocations with or without a Burgers vector component parallel to the macroscopic growth direction (longitudinal or transverse step sources respectively). A simple model is used to illustrate in particular the efficient nucleation of growth steps at transverse sources. Suitably positioned dislocations create morphologically stable patterns of equidistant widely spaced surface steps with monatomic height on otherwise atomically flat surfaces. Such growth surfaces result in interfaces with minimum disorder in multilayer growth.
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