Abstract
The results of dislocation density and 90°-twins investigations in 〈1 1 1〉-oriented InP crystals grown by the LEC technique with two different axial temperature gradients, d T/d z=260 and 100 K/cm, are reported. Estimation of the maximum diameters ( D max) of dislocation-free crystals, which can be grown with a given d T/d z, is made. It is discovered that 90°-twin formation for a given d T/d z takes place in a narrow range of crystal diameters ( D T), and D T≈ D max for both d T/d z=260 and 100 K/cm. By the selective etching of the crystal axial section, crystallization front shape in the 90°-twin region is revealed. It is discovered that 90°-twin formation coincides with the morphological signs of a change from crystal dislocation-free growth mechanism to a dislocation growth mechanism. A possible mechanism of influence of the dislocations on twin formation in the framework of the theory of the crystals lateral growth from the melt is discussed.
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