Dislocation-mediated coupling mechanism between the microstructural defects and Te inclusions in CdZnTe single crystals

Abstract

The dislocation-mediated coupling mechanism between the microstructural defects and Te inclusions in CdZnTe crystal have been investigated through the defect-selective etching and cathodoluminescence (CL). The enrichment of well-arranged dislocation-related defects was found around the Te inclusions. A dislocation-mediated defects interaction model was proposed and native deep-level defects were considered to be associated with induced dislocation motions, showing as a dark CL contrast. The spatial arrangement of the microstructural defects were confined to a stellated octahedron.