Abstract
Structural defect-free GaPN and InGaPN layers were grown on a Si substrate. LEDs and Si MOSFETs, which are elemental devices for OEICs, were monolithically merged in a single chip with a Si layer and an InGaPN/GaPN double hetereostructure layer grown on a Si substrate. The developed processing flow was based on a conventional MOSFET processing flow. It was confirmed that light emission from the LED was modulated by switching the MOSFET. The growth and fabrication process technologies are effective for the realization of monolithic OEICs.
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