Abstract
We report that a lattice-matched and dislocation-free GaAsyP1−x−yNx/GaP0.98N0.02 quantum-well (QW) structure can be grown on a Si substrate. A two-dimensional growth mode was maintained during growth of all the layers. It was confirmed that the QW structure was lattice-matched to the Si substrate from the lattice constant measured by x-ray diffraction. A cross-sectional image taken by transmission electron microscopy revealed that no threading dislocations or misfit dislocations were observed at the QW structure.
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