Dislocation-Free Czochralski Silicon Crystal Growth without the Dislocation-Elimination-Necking Process

Abstract

Dislocation-free silicon crystals have been grown successfully from heavily-boron-doped silicon melts by the Czochralski method without the dislocation-elimination-necking process (Dash neck). A dislocation-free silicon seed of <001> orientation with a boron concentration of about 4×1019 atoms/cm3 was used to grow a silicon crystal with the same boron concentration. No dislocation was generated in the seed during the dipping process, and no misfit dislocation occurred in the grown crystal. These results show that shoulder and body growth can be started immediately after the seeding process.