Abstract
Dislocation-free Si crystals have been grown successfully by the Czochralski (CZ) method without the Dash-necking process. It was found that the boron concentration limit in the seed for no dislocation formation due to thermal shock was 1×1018 atoms/cm3, and the maximum admissible discrepancy of boron concentration in the seed and in the crystal was 7×1018 atoms/cm3 for no dislocation formation in the crystal due to the lattice misfit. Consequently, it is revealed that dislocation-free CZ-Si crystals can be grown from undoped Si melt without the Dash-necking process when a seed with a suitable boron concentration is used.
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