Abstract
Velocities of dislocations in single crystal Ge1−xSix alloy semiconductors with x=0.004–0.022 grown by the Czochralski method were investigated by means of etch pit technique in the temperature range 450–700 °C and the stress range 3–20 MPa. The dislocation velocity in the GeSi decreases monotonically with an increase in the Si content, reaching about a half of that in Ge at x=0.022. The dependencies of the dislocation velocity on stress and temperature in the alloys are expressed by the same type of empirical equation as those in other elemental and compound semiconductors.
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