Abstract
Velocities of individual dislocations in InSb were measured by the double etch technique. A large mobility difference between In-type and Sb-type dislocations was observed. The velocities of both types depend on temperature as exp ( −Q kT ) but with different activation energies Q. For the faster, In-type dislocation, a lower Q was measured. Hence, the mobility difference is concluded to be due to different Peierls barriers. A linear stress dependence of velocity was found.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
