Abstract
AbstractAn attempt has been made to study the etch pit dislocations of isolated as well as matched pairs of cleavage planes of solution grown NaSbF4 and Na3Sb4F15 single crystals when etched with analar grade methyl alcohol and ethyl alcohol. On etching of cleavage faces the pits nucleate at the intersection sites of dislocations with the cleavage face. On successive etching of a cleavage face, arrays of triangular shape etch pits are observed. After prolonged etching some of the etch pits disappear. These pits are curved and terminated indicating that they are crystallographically non‐oriented. One‐to‐one correspondence with respect to number, shape, position and structure of the pits has been established by etching of a matched cleavage face. The etch pit densities of both NaSbF4 and Na3Sb4F15 crystals are found to be 103 per cm2.
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