Abstract
The results of investigations of dislocation effect on the Si electrical and optical properties have been reviewed. The important role of dislocation-point defect interaction in the formation of dislocation properties has been demonstrated. A short review of recent investigations of clean dislocation properties has been presented. The results of investigations of dislocation related defect spatial distribution including dislocation slip planes have been discussed. The mechanisms of dislocation electrical activity formation have been analyzed.
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