Dislocation motion in semiconducting crystals under the influence ofelectronic perturbations

Abstract

The radiation enhanced dislocation glide effect was confirmed in h-ZnO aswell as in other semiconductors, which proved further the ubiquitous nature of this effect insemiconductors. Analysis of the radiation enhanced dislocation vibrationsobserved in the same h-ZnO led us to a tentative model that the effect isbrought about by fluctuations of the charge state of point defects which exertelectrostatic forces on the charged dislocations. The hydrogen-plasma enhanceddislocation glide was studied in Ge, SiGe and GaAs in addition to the previousreports on Si. The absence of the hydrogen effect in α-dislocations inn-GaAs and in thin films of SiGe is interpreted in terms of the soliton model,the essence of which is a strong binding between kinks and hydrogens.