Dislocation motion in InSb crystals under a magnetic field

Abstract

Dislocation displacements under the action of a permanent magnetic field withoutmechanical loading in differently doped InSb crystals are investigated. Thedependences of the mean dislocation path length and the relative number ofdivergence and tightening half-loops on the magnetic induction and preliminaryload are obtained. Experiments on n-InSb crystals with Te impurities andon p-InSb crystals with Ge impurities have shown a sensitivity of themagnetoplasticity to the conductivity type and the dopant content. Study of themagnetoplastic effect in the initial deformed InSb crystals shows that internalstresses decrease the lengths of divergence dislocation paths and simultaneouslyincrease the threshold magnetic field above which the magnetoplasticeffect exists. Possible reasons for the observed phenomena are discussed.