Abstract
The details of the formation, propagation, interaction, and densities of misfit dislocations are combined into a simple model quantitatively predicting dislocation densities for both abrupt and graded heterojunctions. Three key concepts are introduced: (1) misfit dislocations are segmented; (2) accordingly, they must give rise to a density of inclined dislocations, nI, that propagate through the growing layer; and (3) these inclined dislocations can bend in and out of any subsequently formed misfit plane to relieve the strain, and when bent in, serve as strain-relieving misfit dislocations. Thus, the value of nI is expected to remain constant with thickness. Also, nI is predicted to vary directly with the compositional gradient at the heterojunction. It is pointed out that there are two general classes of misfit dislocations, pure-edge and mixed and that their intersections, which cause the misfit dislocations to appear to bend within their plane, can be simply classified into three general types.
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