Abstract
We investigate the structure and mobility of dislocations in hcp 4He crystals. In addition to fully characterizing the five elastic constants of this system, we obtain direct insight into dislocation core structures on the basal plane, which demonstrates a tendency toward dissociation into partial dislocations. Moreover, our results suggest that intrinsic lattice resistance is an essential factor in the mobility of these dislocations. This insight sheds new light on the possible correlation between dislocation mobility and the observed macroscopic behavior of crystalline 4He.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Paper version not known
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
