Abstract
Abstract The yield strength of GaN bulk crystals determined directly by means of compressive deformation is around 100–200 MPa in the temperature range 900–1000°C. On the basis of the observed temperature and strain rate dependencies of yield stress, the dislocation mobility at elevated temperatures is evaluated. Deformed GaN shows a drastic reduction of PL intensity, suggesting that newly formed dislocations give rise to non-radiative recombination centers.
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