Abstract
AbstractThe dependence of dislocation luminescence of p‐ and n‐Ge is investigated using different doping concentrations and ranges of pumping power. Three luminescence bands can be chosen. The main band (0.5 eV) is supposed to be due to the transition of the conduction band electron to the dangling bond, and is effective at any experimental conditions. Two other bands are rather sensitive to the dopant type. This enables us to suggest the model of the corresponding transitions in donor‐acceptor recombination terms.
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