Dislocation luminescence in nitrogen-doped Czochralski and float zonesilicon

Abstract

This paper reports the results of a study of the effect of nitrogen on the opticalproperties of dislocations in nitrogen-doped Czochralski and nitrogen-doped floatzone silicon samples where the nitrogen doping was carried out by adding Si3N4in the molten silicon charge or by nitrogen gas dissolution. Dislocations wereintroduced by plastic deformation at 650°C. In nitrogen-doped plasticallydeformed samples, emissions in the range of the D1–D4 bands of dislocations arepresent with a significant shifting from the energies and intensities of thecorresponding bands in nitrogen-free samples. It has been shown that the maineffect of nitrogen could be the enhancement of the oxygen precipitation. Theresults confirm the suggestion of some of the present authors that luminescence at0.830 eV is associated with some intrinsic properties of oxygen precipitates.