Abstract
Electronic band gap states connected with individual dislocations in diamond and GaN are revealed, using highly spatially resolved electron energy loss (EEL) spectrum mapping. Comparison with calculations of low EEL spectra from first-principle methods allows the identification of the joint density of states of different dislocation core types. Also presented is evidence for instances where point defects/impurities have accumulated in the strain field or segregated to the core of dislocations.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.