Abstract
We studied deformation-induced defects in semi-insulating CdTe and CdZnTe by infrared photoluminescence (PL) and compared our data with earlier results. We confirmed the direct correlation between Y-emission and dislocation density in both compounds. The Y-band intensified near an indenter deformation or near a scribing line, but was barely visible in low-dislocation areas (etch pit density <2×10 5 cm −2). Plastic deformation also increased the concentrations of grown-in defects, namely, those of an important midgap level E C−0.74 eV in CdTe and Cd 1− x Zn x Te ( x<0.1), the materials of choice in today’s detector technology. Our findings demonstrate that dislocation-induced defects can degrade charge collection in radiation detectors.
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Schedule a callMore From: Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
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