Dislocation Formation in Czochralski Si Crystal Growth Using an Annealed Heavily B-Doped Si Seed

Abstract

Dislocation formation in Czochralski (CZ) Si crystal growth using an annealed heavily B-doped Si seed has been investigated. Many dislocations were observed in the crystals grown from the annealed heavily B-doped Si seeds although no dislocations due to thermal shock were formed in the annealed seeds. No misfit dislocations should have been introduced in the grown crystal because there was no difference between the B concentration of the seeds and that of the grown crystals. However, many dislocation loops were observed in the annealed Si seeds. Therefore, the dislocations generated in the grown crystals were probably induced by the dislocation loops in the annealed seed.