Abstract
Dislocation filtering by interfaces between AlxIn1−xSb and AlyIn1−ySb layers grown on a GaAs (001) substrate has been investigated. Transmission electron microscopy analysis shows that as many as 59% of threading dislocations (TDs) can be eliminated by such an interface. An interlayer sample that contains six Al0.12In0.88Sb∕Al0.24In0.76Sb interfaces has 6.0×108TDs∕cm2 at 1.6μm thickness. Compared with an Al0.12In0.88Sb epilayer without an interlayer, this TD density is a factor of ∼4 lower for the same thickness, and about the same as for a layer that is more than twice as thick. Our results suggest that AlxIn1−xSb∕AlyIn1−ySb interfaces can be used to improve the performance of any InSb-based device in which AlxIn1−xSb is used as a buffer, insulating, or barrier layer material.
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
