Abstract
A model for the preferential dissolution near the outcrops of dislocations at rough (K, S or F faces above the roughening temperature) crystal faces has been developed. In contrast to F faces below the roughening transition, no lateral flow of steps from the etched dislocation centre occurs and therefore only small etch pits, either not or only barely visible by optical microscopy are expected to be formed. This was confirmed by etching of K, S and F faces of Bi 4(GeO 4) 3, KH 2PO 4 and potash alum crystals.
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