Dislocation etching of diamond crystals grown in Mg-C system with the addition of silicon

Abstract

The dislocation structure of diamond crystals grown in the Mg-Si-C system at pressure of 7.0–7.5 GPa and temperature of 1800 °C was studied by selective etching. We determined the dislocation density and identified individual features of etching for the growth sectors of {111} and {100} faces. On the {111} faces, all etch pits formed at the outcrops of different dislocations were found to be identical. The feature of grown diamond crystals is the presence of numerous large dislocation loops in the {100} growth sectors. The identified patterns of crystals etching and the internal crystal structure features are associated with the presence of a silicon impurity in the grown diamonds.