Abstract
We study electroabsorption (EA) behavior of InGaN/GaN quantum structures grown using epitaxial lateral overgrowth (ELOG) in correlation with their dislocation density levels and in comparison to steady state and time-resolved photoluminescence measurements. The results reveal that ELOG structures with decreasing mask stripe widths exhibit stronger EA performance, with a maximum EA enhancement factor of 4.8 compared to the reference without ELOG. The analyses show that the EA performance follows similar trends with decreasing dislocation density as the essential parameters of the photoluminescence spectra (peak position, width and intensity) together with the photoluminescence lifetimes. While keeping the growth window widths constant, compared to photoluminescence behavior, however, EA surprisingly exhibits the largest performance variation, making EA the most sensitive to the mask stripe widths.
Highlights
GaN-based optoelectronic devices, e.g., light-emitting diodes (LEDs) and laser diodes (LDs), serve as the enabling technology platforms finding critical use in important applications including indoor and outdoor lighting, liquid crystal display (LCD) backlighting, and data storage
We study electroabsorption (EA) behavior of InGaN/GaN quantum structures grown using epitaxial lateral overgrowth (ELOG) in correlation with their dislocation density levels and in comparison to steady state and time-resolved photoluminescence measurements
The results reveal that ELOG structures with decreasing mask stripe widths exhibit stronger EA performance, with a maximum EA enhancement factor of 4.8 compared to the reference without ELOG
Summary
GaN-based optoelectronic devices, e.g., light-emitting diodes (LEDs) and laser diodes (LDs), serve as the enabling technology platforms finding critical use in important applications including indoor and outdoor lighting, liquid crystal display (LCD) backlighting, and data storage. Electroabsorption modulators that utilize QCSE have found applications in telecommunications in the last few decades, e.g., in data coding [13] and optical switching [14] Most of these studies involved InP/GaAs material system, and the operation wavelength of these devices has been typically in the mid-infrared part of the electromagnetic spectrum. Electroabsorption modulators based on III-Nitride quantum structures, which operate in the blue [15] and ultraviolet [16] region of the electromagnetic spectrum, were demonstrated These find applications in optical clock injection directly into silicon chips [17] and none-of-sight communications [18]. We employ a set of four epi-structures, three of which are designed to contain systematically varying ELOG mask stripe widths while the last one is used as a reference sample without ELOG
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