Abstract
The Ga-N bond extension and compression at the cores of different types of dislocation in hexagonal GaN films grown on Si(111) substrates have been studied by high-resolution transmission electron microscopy. The relative bond extension and compression are about 6 4 and 7 4% respectively around the cores of mixed dislocations and about 9 6 and 12 7% respectively around the cores of pure edge dislocations. The core structure of a pure edge dislocation is an eightfold atom-column ring.
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