Abstract
AbstractIn semiconductors, which have crystal structure without inversion symmetry, charge carriers interact with the long‐range strain field of dislocations through the deformation potential and the piezoelectric couplings. The ground state energy level of the one‐dimensional (1D) band in the potential, due to the long‐range strain field of an edge dislocation, is estimated theoretically, using simple variational and perturbational methods. The ground state energy levels of the 1D band in n‐type direct bandgap III–V and II–VI compound semiconductors are of the order of a few tens to one hundred meV. The contribution of the effect of the piezoelectric potential to the ground state energy level is relatively small, amounting to about 10 to 30% of the total energy. Finally the analogy of the 1D band associated with the dislocations with the 1D quantum well wire (QWW) is also pointed out.
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