Dislocation behavior in seed‐cast grown Si ingots based on crystallographic orientation

Abstract

AbstractThis study concentrates on dislocation behavior during Si growth by the seed‐cast method in different crystallographic orientations. Two methods were combined: (1) Si crystal growth in different seed orientations and (2) float zone Si‐annealing experiment to obtain the purely thermal stress‐induced dislocation density. The main focus is on the difference between the (111) and the (100) growth directions. It is found that peripheral areas are dominated by thermal stress‐induced dislocation densities. Central ingot areas are dominated by other dislocation sources. By comparing the (100) and the (111) orientations, it was found that a difference in dislocation motion exists. This difference is caused by a different activation of slip systems, causing long slip lines in the (111) orientation. It is shown that numerical simulation has problems describing this long‐range dislocation slip. Copyright © 2015 John Wiley & Sons, Ltd.