Abstract
The dislocation of a p+ high-temperature, high-pressure (HPHT) seed crystal is analyzed by X-ray topography using a SR light source, and compared with that of an insulating HPHT seed crystal. The dislocation density of the typical insulating HPHT substrate is around 250 cm-2. Over several years, significant progress has been achieved in reducing the dislocation density of the typical insulating HPHT substrate from the order of 104–105 cm-2 to 102 cm-2. The p+ HPHT seed crystal has unique properties, especially in terms of the number of stacking faults (SFs), and very clear growth sector boundaries with dislocation densities of up to 3000 cm-2. As most research activities have been focused on the “insulating substrate” in HPHT growth technology for a long time, several challenges need to be overcome with respect to the growth of a p+ HPHT crystal.
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