Abstract
There is a great need for high-quality diamond with low dislocation density for high-output power device applications. In this study, we attempted to identify dislocations originating from the homo-epitaxial film/substrate interface in relation to the off-angle of the initial substrate by comparing the dislocation images obtained using x-ray topography by synchrotron radiation facility. For homo-epitaxial film growth on (001) substrate tilted by ∼3°, 3 dislocations were found after growth in the 0.09 cm2 area, corresponding to a density of 30 cm−2. On the other hand, 23 dislocations generated from the film/substrate interface for homo-epitaxial growth on a (001) substrate with ∼1° tilt angle. This fact indicates that the lateral growth using a tilted substrate is an effective way to minimize the number of additional dislocations originating from the homo-epitaxial film/substrate interface.
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