Abstract

AbstractSingle crystals of stannic iodide (SnI4) have been grown employing the controlled‐reaction between SnCl2 and KI solutions by diffusion process in silica gels. As‐grown (111) surfaces of the crystals have been optically studied. Characteristic growth spirals and hopper growth patterns have been observed on them. By successively etching (111) surfaces in a 0.2 N HCl solution, it is established that the pits indicate the sites of dislocations in the crystals. This is further confirmed by comparing the etch patterns before and after chemically polishing (111) surfaces. The average dislocation in the SnI4 crystals have been determined and found to be 7.3 × 102 cm−2. Observations of polygonisations are described and the implications are discussed.

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