Abstract
Chemical mechanical polishing of copper has been conducted using as the copper etchant, benzotriazole (BTA) as the inhibitor, and γ‐alumina particles as the abrasives. The dishing effects were evaluated for the slurries containing various and BTA concentrations. Copper dishing increases dramatically with concentration in the absence of BTA. BTA reduces copper dishing significantly when BTA concentration is increased. No significant improvement in copper dishing reduction has been observed when the BTA concentration is higher than . The copper polishing process is not successful at high concentrations in the absence of BTA. However, a BTA concentration of or higher in the slurry formulation can lead to a reliable implementation of the acidic copper polishing process. © 2000 The Electrochemical Society. All rights reserved.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
