Abstract
This paper presents a thermokinetic computational model of phase transitions in GST225 (germanium–antimony–tellurium) thin films [as well as other phase change materials (PCMs)] induced and initiated by the impact of nano- and femtosecond laser pulses in a wide energy fluence range according to the results of experimental studies using Raman spectra and thin-film samples of TEM cross-sectional image analysis. Applying this phase transition model makes it possible to understand the mechanism of the induced phase transition regarding the usage of PCMs in photonics and optoelectronic devices, which require precise control of the phase state of their PCM-based active elements for their functioning. The proposed model shows the internal structure of the sample, generating both the profile of the crystalline fraction distribution over the sample's depth, providing images of virtual TEM sections, as well as the volume distribution of the crystalline phase.
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
