Abstract
AbstractThe drift‐diffusion and the energy‐transport models appear in the modelling of semiconductor devices. The main difficulty arising in the approximation of the energy transport model by finite volume schemes is the discretization of the Joule heating term in the equation on the density of energy. Following some recent ideas by Domelevo and Omnès for the discretization of the Laplace equation on almost general meshes, we construct a finite volume approximation of the 2‐D drift‐diffusion and energy transport models. These schemes still hold on almost general meshes. Finally, we present numerical simulations of semiconductor devices. Copyright © 2006 John Wiley & Sons, Ltd.
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