Abstract
Summary Persistent spin textures (PSTs) in solid-state materials arise from a unidirectional spin-orbit field in momentum space and offer a route to deliver the necessary long carrier spin lifetimes utilized in future quantum microelectronic devices. Nonetheless, few bulk materials host PSTs owing to crystal symmetry and chemical requirements, with even fewer experimentally demonstrated examples. This scarcity makes both PST materials discovery and performance assessment challenging. Here, we demonstrate that bulk PSTs exist in the family of layered A3B2O7 oxides and that a persistent spin helix (PSH) occurs over a large region of the Brillouin zone—a feature essential to experimental realization. By solving the spin-diffusion equations in the strong coupling limit and using the PST performance criteria we formulate, we find that the spin lifetime of the PSH is ∼63 ns in Sr3Hf2O7—substantially larger than that predicted (∼10 ns) and demonstrated experimentally (∼600 ps) in GaAs/AlGaAs quantum wells.
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