Abstract
Alloying CdTe in GeTe promotes the band convergence and intensifies phonon scattering due to the discordant nature of Cd in GeTe. Upon optimizing carrier concentrationviaSb doping, we obtain a peakZTof 1.8 at 700 K and a high averageZTof 1.3.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have