Abstract
The radiative lifetime distribution G(τ) in a-Si:H has been evaluated for monochromatized photoluminescence (PL). Although the PL intensity in a steady state was almost constant at temperatures lower than 50 K, G(τ) exhibited a drastic change in this temperature range; G(τ) at 13 K was dominated by a single component peaked at 1 ms, whereas another component grew up gradually at around 10 μs with increasing temperature. In this case, the lifetime changes discontinuously from 1 ms to 10 μs. Based on G(τ) evaluated for various conditions, PL mechanism in a-Si:H is reconsidered.
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