Abstract
Cadmium-vacancy complexes are formed in Al single crystals after implantation of Cd ions at 293 K. Postirradiation of these implants with ${\mathrm{H}}^{+}$ and ${\mathrm{Kr}}^{+}$ ions even at 5 K leads to an increase of the substitutional component (${f}_{s}$) of Cd in Al. The increase of ${f}_{s}$ is attributed to disassociation of neighboring Cd-vacancy pairs and serves as a quantitative measure for unstable pair recombination in the relaxation phase of the collision cascade. Our data support the results of molecular-dynamics calculations.
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