Direct-patterning of silicon carbide by nanosphere-assisted pulsed laser

Abstract

Optical near-field enhancement obtained between the spheres and substrate by irradiating with laser beam can be used for nano-patterning the hard-to-machine bulk silicon carbide (SiC). For this study a monolayer of silica (SiO2) spheres of 1.76 µm and 640 nm diameter are deposited on the SiC substrate and then irradiated with an Nd:YAG laser of wavelength 355 nm and 532 nm. Scanning electron microscope and atomic force microscope are used to characterize the features. It was found that the features obtained were having diameters around 150 to 450 nm and the depths varying from 70 to 220 nm.Optical near-field enhancement obtained between the spheres and substrate by irradiating with laser beam can be used for nano-patterning the hard-to-machine bulk silicon carbide (SiC). For this study a monolayer of silica (SiO2) spheres of 1.76 µm and 640 nm diameter are deposited on the SiC substrate and then irradiated with an Nd:YAG laser of wavelength 355 nm and 532 nm. Scanning electron microscope and atomic force microscope are used to characterize the features. It was found that the features obtained were having diameters around 150 to 450 nm and the depths varying from 70 to 220 nm.